What is Global Automotive-grade SiC MOSFET Discrete Market?
The Global Automotive-grade SiC MOSFET Discrete Market refers to the market for silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) that are specifically designed for automotive applications. These components are crucial in electric vehicles (EVs) and hybrid electric vehicles (HEVs) due to their superior efficiency, high-temperature performance, and ability to handle high voltages compared to traditional silicon-based MOSFETs. SiC MOSFETs are used in various automotive systems such as main inverters, onboard chargers (OBC), and DC/DC converters. The market is driven by the increasing adoption of EVs and HEVs, which require more efficient and reliable power electronics to improve performance and extend driving range. As the automotive industry continues to shift towards electrification, the demand for automotive-grade SiC MOSFETs is expected to grow significantly. These components help in reducing energy losses, improving thermal management, and enabling more compact and lightweight designs, which are essential for modern electric vehicles.
650V SiC MOSFET Discrete, 750V SiC MOSFET Discrete, 900V SiC MOSFET Discrete, 1200V SiC MOSFET Discrete in the Global Automotive-grade SiC MOSFET Discrete Market:
The Global Automotive-grade SiC MOSFET Discrete Market includes various voltage ratings such as 650V, 750V, 900V, and 1200V SiC MOSFET Discretes. The 650V SiC MOSFET Discrete is commonly used in applications where moderate voltage handling is required, such as in onboard chargers (OBC) and DC/DC converters. These components offer high efficiency and fast switching capabilities, making them ideal for improving the overall performance of electric vehicles. The 750V SiC MOSFET Discrete is designed for slightly higher voltage applications and provides enhanced thermal performance and lower conduction losses. This makes them suitable for use in main inverters and other high-power automotive systems. The 900V SiC MOSFET Discrete is used in applications that require even higher voltage handling capabilities. These components are known for their robustness and reliability, making them ideal for use in demanding automotive environments. The 1200V SiC MOSFET Discrete is the highest voltage rating in this category and is used in applications that require maximum voltage handling and efficiency. These components are essential for high-power main inverters and other critical automotive systems that require superior performance and reliability. Overall, the different voltage ratings of SiC MOSFET Discretes provide a range of options for automotive manufacturers to choose from, depending on their specific application requirements. The versatility and high performance of these components make them a key enabler for the advancement of electric and hybrid electric vehicles.
Main Inverter (Electric Traction), OBC, DC/DC Converter for EV/HEV in the Global Automotive-grade SiC MOSFET Discrete Market:
The usage of Global Automotive-grade SiC MOSFET Discrete Market in main inverters (electric traction), onboard chargers (OBC), and DC/DC converters for EV/HEV is crucial for the efficient operation of these vehicles. In main inverters, SiC MOSFETs are used to convert the DC power from the battery into AC power to drive the electric motor. The high efficiency and fast switching capabilities of SiC MOSFETs help in reducing energy losses and improving the overall performance of the electric traction system. This results in better acceleration, higher top speeds, and longer driving ranges for electric vehicles. In onboard chargers (OBC), SiC MOSFETs are used to convert the AC power from the charging station into DC power to charge the vehicle's battery. The high efficiency of SiC MOSFETs helps in reducing the charging time and improving the overall efficiency of the charging process. This is particularly important for electric vehicles, as faster charging times and higher efficiency are key factors in improving the convenience and usability of these vehicles. In DC/DC converters, SiC MOSFETs are used to convert the high voltage from the battery into lower voltages required by various electronic systems in the vehicle. The high efficiency and thermal performance of SiC MOSFETs help in reducing energy losses and improving the reliability of these converters. This is essential for ensuring the proper operation of various electronic systems in the vehicle, such as the infotainment system, lighting, and other auxiliary systems. Overall, the usage of SiC MOSFETs in main inverters, onboard chargers, and DC/DC converters is critical for the efficient operation of electric and hybrid electric vehicles. These components help in improving the performance, efficiency, and reliability of these vehicles, making them a key enabler for the advancement of the automotive industry towards electrification.
Global Automotive-grade SiC MOSFET Discrete Market Outlook:
The global Automotive-grade SiC MOSFET Discrete market was valued at US$ 91 million in 2023 and is anticipated to reach US$ 414 million by 2030, witnessing a compound annual growth rate (CAGR) of 23.8% during the forecast period from 2024 to 2030. The market is highly competitive, with the top five players holding a significant share of over 70 percent. These leading companies are driving innovation and development in the market, focusing on improving the performance and efficiency of SiC MOSFETs to meet the growing demand from the automotive industry. The increasing adoption of electric and hybrid electric vehicles is a major factor driving the growth of the market, as these vehicles require more efficient and reliable power electronics to improve performance and extend driving range. The advancements in SiC MOSFET technology are enabling automotive manufacturers to develop more efficient and compact power systems, which are essential for the next generation of electric vehicles. The market is expected to continue its growth trajectory, driven by the ongoing shift towards electrification in the automotive industry and the increasing demand for high-performance power electronics.
| Report Metric | Details |
| Report Name | Automotive-grade SiC MOSFET Discrete Market |
| Accounted market size in 2023 | US$ 91 million |
| Forecasted market size in 2030 | US$ 414 million |
| CAGR | 23.8% |
| Base Year | 2023 |
| Forecasted years | 2024 - 2030 |
| Segment by Type |
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| Segment by Application |
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| Production by Region |
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| Consumption by Region |
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| By Company | STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech), Semikron Danfoss, Navitas (GeneSiC), Toshiba, San'an Optoelectronics, CETC 55, BASiC Semiconductor, Bosch, Zhuzhou CRRC Times Electric, Guangdong AccoPower Semiconductor, Alpha & Omega Semiconductor |
| Forecast units | USD million in value |
| Report coverage | Revenue and volume forecast, company share, competitive landscape, growth factors and trends |
