What is Global High-power GaN Devices for EV Market?
Global High-power GaN Devices for EV Market refers to the growing industry focused on using Gallium Nitride (GaN) technology to enhance the performance of electric vehicles (EVs).
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650 V GaN, 1000 V GaN in the Global High-power GaN Devices for EV Market:
GaN is a semiconductor material that offers significant advantages over traditional silicon-based devices, particularly in high-power applications.
Onboard Battery Chargers, Traction Inverter, DC/DC Converter, Others in the Global High-power GaN Devices for EV Market:
In the context of EVs, GaN devices are used to improve the efficiency and performance of various components, such as onboard chargers, traction inverters, and DC/DC converters.
Global High-power GaN Devices for EV Market Outlook:
These devices are crucial for managing the power flow within an electric vehicle, ensuring that the battery is charged efficiently and that the electric motor operates effectively.
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| Report Metric | Details |
| Report Name | High-power GaN Devices for EV Market |
| Accounted market size in year | US$ 49.7 million |
| Forecasted market size in 2031 | US$ 4421 million |
| CAGR | 91.2% |
| Base Year | year |
| Forecasted years | 2025 - 2031 |
| Segment by Type |
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| Segment by Application |
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| By Region |
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| By Company | Infineon, Texas Instruments, Power Integrations, EPC, Navitas, Nexperia, Transphorm |
| Forecast units | USD million in value |
| Report coverage | Revenue and volume forecast, company share, competitive landscape, growth factors and trends |
